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SEMiX352GB128Ds
Absolute Maximum Ratings Symbol
IGBT VCES IC ICnom ICRM ICRM = 2xICnom VCC = 600 V VGE 20 V Tj = 125 C VCES 1200 V VGES tpsc Tj = 150 C Tc = 25 C Tc = 80 C 1200 377 268 200 400 -20 ... 20 10 -40 ... 150 Tc = 25 C Tc = 80 C 297 204 200 IFRM = 2xIFnom tp = 10 ms, sin 180, Tj = 25 C 400 2000 -40 ... 150 600 -40 ... 125 AC sinus 50Hz, t = 1 min 4000 V A A A A V s C A A A A A C A C V
Conditions
Values
Unit
SEMiX(R)2s
SPT IGBT Modules
SEMiX352GB128Ds
Tj Inverse diode IF IFnom IFRM IFSM Tj Module It(RMS) Tstg Visol
Preliminary Data Features
* Homogeneous Si * SPT = Soft-Punch-Through technology * VCE(sat) with positive temperature coefficient * High short circuit capability * UL recognised file no. E63532
Tj = 150 C
Typical Applications
* AC inverter drives * UPS * Electronic welders up to 20 kHz
Characteristics Symbol
IGBT VCE(sat) VCE0 rCE VGE(th) ICES Cies Coes Cres QG RGint td(on) tr Eon td(off) tf Eoff Rth(j-c) per IGBT IC = 200 A VGE = 15 V chiplevel Tj = 25 C Tj = 125 C Tj = 25 C Tj = 125 C VGE = 15 V VGE=VCE, IC = 8 mA VGE = 0 V VCE = 1200 V VCE = 25 V VGE = 0 V VGE = - 8 V...+ 15 V Tj = 25 C VCC = 600 V IC = 200 A Tj = 125 C RG on = 3 RG off = 3 Tj = 25 C Tj = 125 C f = 1 MHz f = 1 MHz f = 1 MHz 18.9 1.24 0.78 1920 2.00 230 55 20 585 90 21 0.083 Tj = 25 C Tj = 125 C 4.5 1.9 2.10 1 0.9 4.5 6.0 5 0.1 2.35 2.55 1.15 1.05 6.0 7.5 6.5 0.3 V V V V m m V mA mA nF nF nF nC ns ns mJ ns ns mJ K/W
Conditions
min.
typ.
max.
Unit
GB (c) by SEMIKRON Rev. 12 - 02.12.2008 1
SEMiX352GB128Ds
Characteristics Symbol Conditions
Tj = 25 C Tj = 125 C Tj = 25 C Tj = 125 C rF Tj = 25 C Tj = 125 C IF = 200 A Tj = 125 C di/dtoff = 5350 A/s T = 125 C j VGE = -15 V Tj = 125 C VCC = 600 V per diode 0.75 0.5 3.8 4.0
min.
typ.
2.0 1.8 1.1 0.85 4.5 4.8 240 31 11
max.
2.5 2.3 1.45 1.2 5.3 5.5
Unit
V V V V m m A C mJ
Inverse diode VF = VEC IF = 200 A VGE = 0 V chiplevel VF0
SEMiX(R)2s
SPT IGBT Modules
SEMiX352GB128Ds
IRRM Qrr Err Rth(j-c) Module LCE RCC'+EE' Rth(c-s) Ms Mt w
0.15 18
K/W nH m m K/W
Preliminary Data Features
* Homogeneous Si * SPT = Soft-Punch-Through technology * VCE(sat) with positive temperature coefficient * High short circuit capability * UL recognised file no. E63532
res., terminal-chip per module to heat sink (M5) to terminals (M6)
TC = 25 C TC = 125 C 3 2.5
0.7 1 0.045 5 5 250 0,493 5% 3550 2%
Nm Nm g
Temperature sensor R100 B100/125 Tc=100C (R25=5 k) R(T)=R100exp[B100/125(1/T-1/T100)]; T[K]; k K
Typical Applications
* AC inverter drives * UPS * Electronic welders up to 20 kHz
GB 2 Rev. 12 - 02.12.2008 (c) by SEMIKRON
SEMiX352GB128Ds
Fig. 1 Typ. output characteristic, inclusive RCC'+ EE'
Fig. 2 Rated current vs. temperature IC = f (TC)
Fig. 3 Typ. turn-on /-off energy = f (IC)
Fig. 4 Typ. turn-on /-off energy = f (RG)
Fig. 5 Typ. transfer characteristic
Fig. 6 Typ. gate charge characteristic
(c) by SEMIKRON
Rev. 12 - 02.12.2008
3
SEMiX352GB128Ds
Fig. 7 Typ. switching times vs. IC
Fig. 8 Typ. switching times vs. gate resistor RG
Fig. 9 Typ. transient thermal impedance
Fig. 10 Typ. CAL diode forward charact., incl. RCC'+EE'
Fig. 11 Typ. CAL diode peak reverse recovery current
Fig. 12 Typ. CAL diode recovery charge
4
Rev. 12 - 02.12.2008
(c) by SEMIKRON
SEMiX352GB128Ds
SEMiX 2s
GB
This is an electrostatic discharge sensitive device (ESDS), international standard IEC 60747-1, Chapter IX This technical information specifies semiconductor devices but promises no characteristics. No warranty or guarantee expressed or implied is made regarding delivery, performance or suitability.
(c) by SEMIKRON
Rev. 12 - 02.12.2008
5

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